Munich, Germany - 25 July 2017 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches the OptiMOS™ Linear FET series. This new product family combines the state-of-the-art on-state resistance (R ) of a trench MOSFET with the wide Safe Operating Area of a planar MOSFET. This solves the trade-off between R and linear mode capability. The OptiMOS Linear FET can operate in the saturation region of an enhanced mode MOSFET. It is the perfect fit for hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS).

Both, the rugged linear mode operation and the higher pulse current contribute to low conduction losses, faster start-up, and shorter down time. The OptiMOS Linear FET prevents damage at the load if there is a short circuit, by limiting high in-rush currents.

Availability

The OptiMOS Linear FET is available now in three voltage classes: 100 V, 150 V, and 200 V. They can be supplied in either a D²PAK or D²PAK 7pin package. These industry standard packages offer a compatible footprint for drop-in replacement. More information is available at www.infineon.com/optimos-linearfet.

Infineon Technologies AG published this content on 25 July 2017 and is solely responsible for the information contained herein.
Distributed by Public, unedited and unaltered, on 25 July 2017 10:29:03 UTC.

Original documenthttps://www.infineon.com/cms/en/about-infineon/press/market-news/2017/INFPMM201707-065.html

Public permalinkhttp://www.publicnow.com/view/F2100BBBD94A9D6216084CA8CFA1CF368B7233D1