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Ferroelectrics

A new spin on spintronics

Nature Materials volume 9, pages 380–381 (2010)Cite this article

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The use of a ferroelectric tunnel junction to control the spin polarization of adjacent magnetic electrodes promises a new approach to the use of interface effects for low-power-consumption spintronic devices.

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Figure 1: Electric control of magnetism in a storage device.

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  1. R. Ramesh is in the Department of Materials Science and Engineering and in the Department of Physics, University of California, Berkeley, California 94720, USA. rramesh@berkeley.edu,

    R. Ramesh

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  1. R. Ramesh
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Ramesh, R. A new spin on spintronics. Nature Mater 9, 380–381 (2010). https://doi.org/10.1038/nmat2762

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