TSUKUBA, Japan, Jan. 18, 2021 /PRNewswire/ -- Natural
biomaterials show potential for the next generation of green
electronics due to their biocompatibility and biodegradability.
When combined with other nano-materials the biocomposites can
exhibit unique functionality applicable for green memory devices.
In their award-winning paper published in STAM, Ye Zhou and
colleagues describe the potential of biocomposites for memory
devices and related green electronic fields.
The review paper by Ye Zhou and colleagues at Shenzen University
covers recent progress in the development of biocomposites in data
storage, focusing on the application of biocomposites for resistive
random-access memory and field effect transistors, working
mechanisms, flexibility, and transient characteristics.
Details about the paper
Xuechao Xing, Meng Chen,Yue Gong,
Ziyu Lv, Su-Ting Han and Ye
Zhou, Building memory devices from biocomposite electronic
materials, Science and Technology of Advanced Materials 21, 2020
- Issue 1
https://www.tandfonline.com/doi/full/10.1080/14686996.2020.1725395
Ye Zhou's research includes flexible and printed electronics,
nano-composite materials and nano-scale devices for technological
applications such as logic circuits, memories, photonics and
sensors. "Our goal is to develop and investigate functional
materials for future flexible electronics," explains Zhou.
"Recently we have developed a biopolymer composite based transistor
to mimic neuroplasticity. The synaptic device can be optically
operated in volatile or nonvolatile modes, ensuring concomitant
short-term and long-term memory." Zhou and his colleagues are
planning to use their expertise on such devices to fabricate
biocomposite based synapse arrays for neuromorphic computing
applications.
Zhou says that he decided to write a review for STAM on this
topic because natural biomaterials are potential candidates for the
next generation of green electronics due to their biocompatibility
and biodegradability.
"In this review paper, we mainly cover recent progress in the
development of biocomposites in data storage, focusing on the
application of biocomposites in resistive random-access memory
(RRAM) and field effect transistors (FET) with their device
structure, working mechanism, flexibility, transient
characteristics," explains Zhou.
On receiving the STAM Almetrics Award 2020 Zhou said: "It
is my honor to receive the Award and I would like to thank the
STAM editors for giving us the opportunity to publish our
paper. The award also proves that biocomposite electronic materials
is a very promising research area and we will put continue efforts
on this research field. STAM is a very famous journal and it always
includes very important research work. The fast publication and
open access property can help the scientists to quickly show the
results to readers."
Further information
Science and Technology of Advanced
Materials (STAM) Headquarters Office, National Institute
for Materials Science (NIMS)
Address: 1-2-1 Sengen, Tsukuba 305-0047
EMAIL: stam-info@ml.nims.go.jp
About NIMS and STAM
NIMS and Empa – Swiss Federal Laboratories for Materials Science
and Technology have jointed efforts to develop a flagship journal
that provides highly-quality information on recent developments in
materials science within an open access platform. The collaboration
will strengthen the position of STAM in Europe.
Photo:
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