Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • Perspective
  • Published:

Carbon nanotube digital electronics

Abstract

It is anticipated that the scaling of silicon complementary metal–oxide–semiconductor (CMOS) devices will end around 2020, but alternative technologies capable of maintaining advances in computing power and energy efficiency have not yet been established. Among various options, carbon-nanotube-based electronics has been shown to be one of the most promising candidates. A range of methods have been developed to prepare high-purity semiconducting carbon nanotubes suitable for use in integrated circuits, and 5 nm nanotube transistors with superior performance to that of silicon CMOS have been demonstrated. Here, we explore the potential of carbon nanotube digital electronics. We examine the development of nanotube-based CMOS field-effect transistors and the different nanotube material systems available to build integrated circuits. We also highlight the medium-scale integrated circuits created to date and consider the challenges that exist in delivering large-scale systems.

This is a preview of subscription content, access via your institution

Access options

Buy this article

Prices may be subject to local taxes which are calculated during checkout

Fig. 1: Fabrication and characteristics of CNT FETs.
Fig. 2: CNT-based scaled FETs.
Fig. 3: CNT material systems for electronics applications.
Fig. 4: Medium-scale CNT integrated circuits.
Fig. 5: CNT-based five-stage ring-oscillator circuit.

Similar content being viewed by others

References

  1. Service, R. F. Is silicon’s reign nearing its end. Science 323, 1000–1002 (2009).

    Google Scholar 

  2. Waldrop, M. M. The chips are down for Moore’s law. Nature 530, 144–147 (2016).

    Google Scholar 

  3. Iijima, S. Helical microtubules of graphitic carbon. Nature 354, 56–58 (1991).

    Google Scholar 

  4. Chau, R. et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Trans. Nanotechnol. 4, 153–158 (2005).

    Google Scholar 

  5. George, S. et al. Toward high-performance digital logic technology with carbon nanotubes. ACS Nano 8, 8730–8745 (2014).

    Google Scholar 

  6. 20 years of nanotube transistors. Nat. Electron. 1, 149 (2018).

  7. Tans, S. J., Verschueren, A. R. M. & Dekker, C. Room-temperature transistor based on a single carbon nanotube. Nature 393, 49–52 (1998).

    Google Scholar 

  8. Martel, R., Schmidt, T., Shea, H. R., Hertel, T. & Avourisa, Ph Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 73, 2447–2449 (1998).

    Google Scholar 

  9. Javey, A., Guo, J., Wang, Q., Lundstrom, M. & Dai, H. J. Ballistic carbon nanotube field-effect transistors. Nature 424, 654–657 (2003).

    Google Scholar 

  10. Bockrath, M. et al. Chemical doping of individual semiconducting carbon-nanotube ropes. Phys. Rev. B 61, R10606–R10608 (2000).

    Google Scholar 

  11. Zhou, C., Kong, J., Yenilmez, E. & Dai, H. J. Modulated chemical doping of individual carbon nanotubes. Science 290, 1552–1555 (2000).

    Google Scholar 

  12. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).

    Google Scholar 

  13. Zhang, Z. Y. et al. Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits. Nano Lett. 7, 3603–3607 (2007).

    Google Scholar 

  14. Zhang, Z. Y. et al. Self-aligned ballistic n-type single walled carbon nanotube field-effect transistors with adjustable threshold voltage. Nano Lett. 8, 3696–3701 (2008).

    Google Scholar 

  15. Ding, L. et al. Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices. Nano Lett. 9, 4209–4214 (2009).

    Google Scholar 

  16. Zhang, Z. Y. et al. Almost perfectly symmetric SWCNT-based CMOS devices and scaling. ACS Nano 3, 3781–3787 (2009).

    Google Scholar 

  17. Kim, W. et al. Electrical contacts to carbon nanotubes down to 1nm in diameter. Appl. Phys. Lett. 87, 1731011–1731013 (2005).

    Google Scholar 

  18. Shahrjerdi, D. et al. High-performance air-stable n-type carbon nanotube transistors with erbium contacts. ACS Nano 7, 8303–8308 (2013).

    Google Scholar 

  19. Dennard, R. et al. Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J. Solid State Circuits SC 9, 256–268 (1974).

    Google Scholar 

  20. Hisamoto, D. et al. FinFET—a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron. Devices 47, 2320–2325 (2000).

    Google Scholar 

  21. Peng, L.-M., Zhang, Z. Y. & Wang, S. Carbon nanotube electronics: recent advances. Materials Today 17, 433–442 (2014).

    Google Scholar 

  22. Qiu, C. G. et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 355, 271–276 (2017).

    Google Scholar 

  23. Cao, Q., Tersoff, J., Farmer, D. B., Zhu, Y. & Han, S.-J. Carbon nanotube transistors scaled to a 40-nanometer footprint. Science 356, 1369–1372 (2017).

    Google Scholar 

  24. Qiu, C. G. et al. Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio. ACS Nano 9, 969–977 (2015).

    Google Scholar 

  25. Qiu, C. G. et al. Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches. Science 361, 387–392 (2018).

    Google Scholar 

  26. Franklin, A. D. The road to carbon nanotube transistors. Nature 498, 443–444 (2013).

    Google Scholar 

  27. Islam, A. E., Rogers, J. A. & Alam, M. A. Recent progress in obtaining semiconducting single-walled carbon nanotubes for transistor applications. Adv. Mater. 27, 7908–7937 (2015).

    Google Scholar 

  28. Han, S.-J. et al. High-speed logic integrated circuits with solution processed self-assembled carbon nanotubes. Nat. Nanotechnol. 12, 861–866 (2017).

    Google Scholar 

  29. Brady, G. J. et al. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs. Sci. Adv. 2, e1601240 (2016).

    Google Scholar 

  30. Cao, Q. et al. Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics. Nat. Nanotechnol. 8, 180–186 (2013).

    Google Scholar 

  31. He, X. W. et al. Wafer-scale monodomain films of spontaneously aligned single-walled carbon nanotubes. Nat. Nanotechnol. 11, 633–639 (2016).

    Google Scholar 

  32. Si, J. et al. Scalable preparation of high-density semiconducting carbon nanotube arrays for high performance field-effect transistors. ACS Nano 12, 627–634 (2018).

    Google Scholar 

  33. Shulaker, M. M. et al. Carbon nanotube computer. Nature 501, 526–530 (2013).

    Google Scholar 

  34. Yang, F. et al. Chirality-specific growth of single-walled carbon nanotubes on solid alloy catalysts. Nature 510, 522–524 (2014).

    Google Scholar 

  35. Zhang, S. C. et al. Arrays of horizontal carbon nanotubes of controlled chirality grown using designed catalysts. Nature 543, 234–238 (2017).

    Google Scholar 

  36. Collins, P. G., Arnold, M. S. & Avouris, Ph Engineering carbon nanotubes and nanotube circuits using electrical breakdown. Science 292, 706–709 (2001).

    Google Scholar 

  37. Maune, H. T. et al. Self-assembly of carbon nanotubes into two-dimensional geometries using DNA origami templates. Nat. Nanotechnol. 5, 61–66 (2010).

    Google Scholar 

  38. Pei, T. et al. Modularized construction of general integrated circuits on individual carbon nanotubes. Nano Lett. 14, 3102–3109 (2014).

    Google Scholar 

  39. Cao, Q. et al. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates. Nature 454, 495–500 (2008).

    Google Scholar 

  40. Sun, D.-M. et al. Flexible high-performance carbon nanotube integrated circuits. Nat. Nanotechnol. 6, 156–161 (2011).

    Google Scholar 

  41. Arnold, M. S., Green, A. A., Hulvat, J. F., Stupp, S. I. & Hersam, M. C. Sorting carbon nanotubes by electronic structure using density differentiation. Nat. Nanotechnol. 1, 60–65 (2006).

    Google Scholar 

  42. Melburne, C. et al. Self-sorted, aligned nanotube networks for thin-film transistors. Science 321, 101–104 (2008).

    Google Scholar 

  43. Rahul, R. et al. Carbon nanotubes and related nanomaterials: critical advances and challenges for synthesis toward mainstream commercial applications. ACS Nano 12, 11756–11758 (2018).

    Google Scholar 

  44. Chen, B. Y. et al. Highly uniform carbon nanotube field-effect transistors and medium scale integrated circuits. Nano Lett. 16, 5120–5128 (2016).

    Google Scholar 

  45. Yang, Y. J. et al. High-performance complementary transistors and medium-scale integrated circuits based on carbon nanotube thin films. ACS Nano 11, 4124–4132 (2017).

    Google Scholar 

  46. Zhong, D. L. et al. Gigahertz integrated circuits based on carbon nanotube films. Nat. Electron. 1, 40–45 (2018).

    Google Scholar 

  47. Zhao, C. Y. et al. Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect. Appl. Phys. Lett. 112, 053102 (2018).

    Google Scholar 

  48. Franklin, A. D. Nanomaterials in transistors: from high-performance to thin-film applications. Science 349, aab2750 (2015).

    Google Scholar 

  49. Tang, J. S. et al. Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays. Nat. Electron. 1, 191–196 (2018).

    Google Scholar 

  50. Xiang, L. et al. Low-power carbon nanotube-based integrated circuits that can be transferred to biological surfaces. Nat. Electron. 1, 237–245 (2018).

    Google Scholar 

  51. Shulaker, M. et al. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Nature 547, 74–78 (2017).

    Google Scholar 

  52. Sabry, M. M. et al. Energy-efficient abundant-data computing: the N3XT 1,000x. Computer 48, 24–33 (2015).

    Google Scholar 

Download references

Acknowledgements

This work was supported by the National Key Research & Development Program (grant nos. 2016YFA0201901 and 2016YFA0201902), the National Science Foundation of China (grant nos. 61621061, 61427901 and 61888102), and the Beijing Municipal Science and Technology Commission (grant no. D171100006617002 1-2). Figure 3d was supplied by W. Sun, who is gratefully acknowledged.

Author information

Authors and Affiliations

Authors

Contributions

L.-M.P. conceived the project. Z.Z and C.Q. prepared the figures and co-wrote the manuscript.

Corresponding author

Correspondence to Lian-Mao Peng.

Ethics declarations

Competing interests

The authors declare no competing interests.

Additional information

Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Peng, LM., Zhang, Z. & Qiu, C. Carbon nanotube digital electronics. Nat Electron 2, 499–505 (2019). https://doi.org/10.1038/s41928-019-0330-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1038/s41928-019-0330-2

This article is cited by

Search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing